The Susceptibility of Silicon‐Ion Implanted Gate Insulators to X‐Ray Radiation‐Induced Defect Generation-Reference-Cited by-同舟云学术

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The Susceptibility of Silicon‐Ion Implanted Gate Insulators to X‐Ray Radiation‐Induced Defect Generation

Published:1991-03-01 Issue:3 Volume:138 Page:826-829
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Sune C. T.¹²³,Reisman A.¹²³,Williams C. K.¹²³

Affiliation:

1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695‐7911

2. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695‐7911, and MCNC, Research Triangle Park, North Carolina 27709‐2889

3. MCNC, Research Triangle Park, North Carolina 27709‐2889

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2085684/pdf

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiO2 gate insulator defects, spatial distributions, densities, types, and sizes;Journal of Electronic Materials;1995-12

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