The Effects of Gas‐Phase Additives NH 3, NO, and NO 2 on SiH4 / O 2 Chemical Vapor Deposition-Reference-Cited by-同舟云学术

The Effects of Gas‐Phase Additives NH 3, NO, and NO 2 on SiH4 / O 2 Chemical Vapor Deposition

Published:1998-03-01 Issue:3 Volume:145 Page:1070-1075
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Takahashi Takahiro¹²,Hagiwara Katsunori¹²,Komiyama Hiroshi¹²,Egashira Yasuyuki¹²

Affiliation:

1. Department of Chemical Systems Engineering, Division of Engineering, Graduate School, University of Tokyo, 7‐3‐1 Hongo, Bunkyo‐ku, Tokyo 1138656, Japan

2. Division of Chemical Engineering, Department of Chemical Science and Engineering, Graduate School of Engineering Science, Osaka University, 1‐3 Machikaneyama‐cho, Toyonaka‐shi Osaka 5608531, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1838391/pdf

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