The Growth of GeSn Layer on Patterned Si Substrate by MBE Method-Reference-Cited by-同舟云学术

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The Growth of GeSn Layer on Patterned Si Substrate by MBE Method

Published:2018-07-20 Issue:7 Volume:86 Page:349-355
ISSN:1938-6737
Container-title:ECS Transactions
language:en
Short-container-title:ECS Trans.

Author:

Yu Kai,Zhao Yue,Li Chuanbo,Feng Shuai,Chen Xiao,Wang Yiquan,Zuo Yuhua,Cheng Buwen

Publisher

The Electrochemical Society

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire;Crystals;2024-04-28

2. Controlling solid–liquid–solid GeSn nanowire growth modes by changing deposition sequences of a-Ge:H layer and SnO2 nanoparticles;Nanotechnology;2021-06-03

3. Epitaxial GeSn/Ge Vertical Nanowires for p-Type Field-Effect Transistors with Enhanced Performance;ACS Applied Nano Materials;2020-12-21

4. High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-temperature Magnetron Sputtering for Optoelectronic Application;Materials;2019-08-21

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