(Invited) High Brightness, Large Scale GaN Based Light-Emitting Diode Grown on 8-Inch Si Substrate
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Published:2014-03-20
Issue:4
Volume:61
Page:71-78
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Lee Seung-Jae,Park Hyung-Jo,Park Jun-Beom,Jeon Dae-Woo,Baek Jong Hyeob,Li Hongwei,Krishnan Balakrishnan,Su Jie,Paranjpe Ajit,Lee Dong S.
Abstract
A crack-free, uniform InGaN/GaN light-emitting diode (LED) structure with strain-engineered buffer layer was grown on an 8-inch diameter Si(111) substrate. The full width at half maximum (FWHM) of (002) and (102) ω-scan is 280 and 420 arcsec, respectively. For LED on 8-inch Si, multiple quantum well (MQW) photoluminescence (PL) wavelength uniformity of 0.55% (2.4 nm) has been achieved by using proper curvature engineered wafer carrier. We demonstrated high brightness 1 x 1 mm2 LED devices utilizing vertical chip process then evaluated their device properties. The electro-optical characteristics of the fabricated vertical LED (VLED) shows around 1 W light output power at 1 A injection current with operating voltage of 4.0 V.
Publisher
The Electrochemical Society