Negative Differential Resistance of 2D Electron Gases in 0.1 μm Pseudomorphic HEMTs-Reference-Cited by-同舟云学术

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Negative Differential Resistance of 2D Electron Gases in 0.1 μm Pseudomorphic HEMTs

Published:2004 Issue:11 Volume:7 Page:G290
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Kim Sam-Dong,Oh Jung-Hun,Han Hyo-Jong,Lim Byeong-Ok,Rhee Jin-Koo,Sul Woo-Suk

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference14 articles.

1. The Possibility of Negative Resistance Effects in Semiconductors

2. Microwave oscillations of current in III–V semiconductors

3. Demonstration of a new oscillator based on real‐space transfer in heterojunctions

4. Electron transport in heterojunctions and superlattices

5. Current oscillation in modulation‐doped GaInAs/n‐GaAs strained‐layer superlattices

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive Characterization of In[sub 0.45]Al[sub 0.55]As∕In[sub 0.5]Ga[sub 0.5]As∕In[sub x]Al[sub 1−x]As Metamorphic High-Electron-Mobility Transistors on GaAs Substrates;Journal of The Electrochemical Society;2006

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