Application of a Semi‐insulating Amorphous Hydrogenated Silicon Nitride Film as a Resistive Field Shield and Its Reliability-Reference-Cited by-同舟云学术

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Application of a Semi‐insulating Amorphous Hydrogenated Silicon Nitride Film as a Resistive Field Shield and Its Reliability

Published:1998-12-01 Issue:12 Volume:145 Page:4296-4304
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Matsuzaki K.¹,Horasawa T.²,Tada G.³,Saga M.⁴

Affiliation:

1. Fuji Electric Corporate Research and Development, Limited, Advanced Device Technology Laboratory, Matsumoto City, Japan 390

2. Fuji Electric Company, Limited, Matsumoto Factory, IC Fabrication Department, Matsumoto City, Japan 390

3. Fuji Electric Company, Limited, Matsumoto Factory, Semiconductor Device Research and Development Center, Matsumoto City, Japan 390

4. Fuji Electric Corporate Research and Development, Limited, Yokosuka City, Japan 240

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1838954/pdf

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-temperature PECVD-deposited silicon nitride thin films for sensor applications;Surface and Coatings Technology;2001-07

2. A review of RESURF technology;12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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