Author:
Mertens Robert G.,Sundaram Kalpathy B.
Abstract
Silicon nanowires (SiNWs) grown by electroless etching technique using HF/AgNO3 solution were subsequently oxidized. SiNWs grown by this method do not oxidize in the same manner as planar Si. The exposed areas for oxidation, being vertically-align SiNWs, cycle between (100) and (110) orientations, going around the SiNW. A result of this is that, since (100) and (110) oriented Silicon (Si) oxidize at different rates, the oxide growth will produce a "squarish" structure.
Publisher
The Electrochemical Society