Characterization of Excess Si in Nonstoichiometric SiO2 Films by Optical and Surface Analysis Techniques-Reference-Cited by-同舟云学术

Characterization of Excess Si in Nonstoichiometric SiO2 Films by Optical and Surface Analysis Techniques

Published:1997-01-01 Issue:1 Volume:144 Page:379-383
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Falcony C.¹²³,Calleja W.¹²³,Aceves M.¹²³,Siqueiros J. M.¹²³,Machorro R.¹²³,Cota‐Araiza L.¹²³,Soto G.¹²³,Farías M. H.¹²³

Affiliation:

1. Centro de Investigación y de Estudios Avanzados del IPN, Departamento de Física, México, DF 07000, México

2. INAOE, Departamento de Electrónica, 72000, Pueblo Pue, México

3. Institute de Física, UNAM, Laboratorio de Ensenada, Ensendada, BC 22800, México

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1837414/pdf

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