Affiliation:
1. General Electric Company, Corporate Research and Development, Schenectady, New York 12301
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Cited by
16 articles.
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1. Dopants;Computational Microelectronics;2004
2. Study of the diffusion behaviour of aluminium in silicon up to 900°C by nuclear reaction analysis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-03
3. Al‐Based Precipitate Evolution during High Temperature Annealing of Al Implanted in Si;Journal of The Electrochemical Society;1993-08-01
4. Diffusion and outdiffusion of aluminium implanted into silicon;Semiconductor Science and Technology;1993-04-01
5. High energy implants of aluminum in Czochralski and floating zone grown silicon substrates;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-04