Surface Damage in Silicon Substrates after the SiCl[sub 4] Dry Etch of a Poly-Si Film-Reference-Cited by-同舟云学术

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Surface Damage in Silicon Substrates after the SiCl[sub 4] Dry Etch of a Poly-Si Film

Published:2001 Issue:3 Volume:148 Page:G150
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Susi E.,Castaldini A.,Cavalcoli D.,Cavallini A.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Study of the electrical active defects induced by reactive ion etching in n-type silicon

2. Electrical Characterization and Surface Analysis of Dry Etch‐Induced Damage on Si after Etching in an ECR Source

3. Defects Introduced by Plasma Processing of Silicon

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