The Mechanism of Over-Etch in Poly-Gate Etching
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Published:2010-11-23
Issue:1
Volume:27
Page:743-748
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Zhang Qingzhao,Xing Tao,Yang Weifeng,Wang Baoquan,Li Bing,Yang Xia
Abstract
The over-etch mechanism in poly-gate etching is investigated. The relationships between the final poly-gate profile and the over-etch process parameters are presented. The oxygen flow and temperature of electrostatic chuck (ESC) both sensitively contribute to the notch of the poly-gate profile. Two corresponding process models are suggested.
Publisher
The Electrochemical Society