Local-Topography-Induced Defects during Tungsten Chemical Mechanical Polishing and Their Impact on Back End of Line-Reference-Cited by-同舟云学术

Local-Topography-Induced Defects during Tungsten Chemical Mechanical Polishing and Their Impact on Back End of Line

Published:2009 Issue:1 Volume:156 Page:H64
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Yu H.,Wang X. B.,Sheng H. F.,Lu W.,Zhou M. S.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference11 articles.

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2. S. Demuynck, A. Nackaerts, G. Van den Bosch, T. Chiarella, J. Ramos, Zs. Tökei, J. Vaes, N. Heylen, G. P. Beyer, M. Van Hove, et al. , inProceedings IITC, San Francisco, CA, p. 178 (2006).

3. I. Shao, J. M. Cotte, B. Haran, A. W. Topol, E. E. Simonyi, C. Cabral, and H. Dligianni , inProceedings of IITC, San Francisco, CA, p. 102 (2007).

4. W. I. Milne, X. Wang, Y. Zhang, S. Haque, S. M. Kim, F. Udrea, J. Robertson, and K. B. K. Teo inProceedings of IITC, San Francisco, CA, p. 105 (2008).

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