Atomistic Modeling of Strained SiGe Nanofins
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Published:2014-08-12
Issue:6
Volume:64
Page:557-572
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Dunham Scott T.,Lai Haoyu,Chen Renyu
Abstract
We utilize a hierarchical approach to atomistic modeling with density functional theory (DFT) calculations being used together with experimental observations to determine parameters for molecular dynamics (MD) potentials and kinetic lattice Monte Carlo (KLMC) simulations. MD and KLMC are used to model epitaxial growth and impurity redistribution in strained group IV alloy nanostructures.
Publisher
The Electrochemical Society