Oxide Passivation of Photochemically Unpinned GaAs

Author:

Kirchner P. D.1,Warren A. C.1,Woodall J. M.1,Wilmsen C. W.1,Wright S. L.1,Baker J. M.1

Affiliation:

1. IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

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2. Optimization of UV-assisted wet oxidation of GaAs;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-01

3. Electrical characteristics of metal–insulator–semiconductor Schottky diodes using a photowashing treatment in Al[sub x]Ga[sub 1−x]As/InGaAs (X=0.75) pseudomorphic high electron mobility transistors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003

4. Effects of photowashing treatment on electrical properties of a GaAs metal–semiconductor field-effect transistor;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002

5. Reduction of Schottky Reverse Leakage Current Using GaAs Surface Cleaning with UVO3Treatment;Japanese Journal of Applied Physics;1999-07-15

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