Fabrication and Characterization of Radiation Hardened SOI Wafers via Ion-Cut Technique-Reference-Cited by-同舟云学术

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Fabrication and Characterization of Radiation Hardened SOI Wafers via Ion-Cut Technique

Published:2018 Issue:12 Volume:7 Page:P736-P739
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Chang Yongwei^ORCID,Yu Chao,Wei Xing^ORCID,Lu Kai,Chen Da,Dong Yemin

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Silicon-on-Insulator Technology: Materials to VLSI

2. Kononchuk O. Nguyen B.-Y. , Silicon-On-Insulator (SOI) Technology: Manufacture and Applications, 1st ed. (Woodhead Publishing Series in Electronic and Optical Materials, 2014).

3. A Novel PNPN-Like Z-Shaped Tunnel Field- Effect Transistor With Improved Ambipolar Behavior and RF Performance

4. Ground plane fin-shaped field effect transistor (GP-FinFET): A FinFET for low leakage power circuits

5. Advantages and limitations of silicon-on-insulator technology in radiation environments

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