(Invited) Fabrication and Properties of Abrupt Si-Ge Heterojunction Nanowire Structures
-
Published:2010-10-01
Issue:6
Volume:33
Page:671-680
-
ISSN:1938-5862
-
Container-title:ECS Transactions
-
language:
-
Short-container-title:ECS Trans.
Author:
Wen Cheng-Yen,Reuter Mark,Tersoff Jerry,Stach Eric,Ross Frances
Abstract
Fabrication of Si-Ge nanowire heterostructures offers great design flexibility in device applications, provided the interfaces are defect-free and compositionally abrupt. We use in-situ transmission electron microscopy to study nanowire growth, and find that abrupt Si-Ge interfaces can be fabricated in nanowires by a growth method that uses a solid AlAu2 catalyst. Growth of uniform segments of SiGe alloy in Si nanowires with sharp interfaces can also be realized using this method. We present in-situ measurements of nanowire growth kinetics and discuss the strain distribution and thermal stability in Si/Ge and Si/Ge/Si nanowire junction structures.
Publisher
The Electrochemical Society