Temperature Dependent Emission of Strontium-Barium Orthosilicate (Sr2−xBax)SiO4:Eu2+ Phosphors for High-Power White Light-Emitting Diodes

Author:

Baginskiy I.,Liu R. S.,Wang C. L.,Lin R.T.,Yao Y. J.

Abstract

Samples of (Sr1.9−xBax)SiO4:Eu0.1 were synthesized by a solid-state reaction. The maximum emission intensity under 460 nm excitation was obtained at a Ba content, x, of 1.6. All Sr1.9−xBaxSiO4:Eu0.1 samples except for Ba1.9SiO4:Eu0.1 exhibited a temperature-driven blue-shift of the emission band. The thermostability of emission in (Sr1.9−xBax)SiO4:Eu0.1 depended strongly on the Ba/Sr ratio. The thermal quenching temperature reached its maximum at a Ba concentration x of 1.2–1.6 and was much lower for Ba1.9SiO4:Eu2+ 0.1.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

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