Atmospheric Pressure Selective Epitaxial Growth of Heavily In Situ Phosphorous-Doped Si(:C) Raised Sources and Drains
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Agglomeration control during the selective epitaxial growth of Si raised sources and drains on ultra-thin silicon-on-insulator substrates
2. Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains
3. Disilane-based cyclic deposition/etch of Si, Si:P and Si1−yCy:P layers: I. The elementary process steps
4. Disilane-based cyclic deposition/etch of Si, Si:P and Si1−yCy:P layers: II. The CDE features
5. Growth kinetics and boron doping of very high Ge content SiGe for source/drain engineering
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