Direct Observation of Heat Transport in Plural AlN Films Using Thermal Imaging and Transient Thermal Reflectance Method-Reference-Cited by-同舟云学术

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Direct Observation of Heat Transport in Plural AlN Films Using Thermal Imaging and Transient Thermal Reflectance Method

Published:2011 Issue:5 Volume:14 Page:H184
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Lee Taehun,Burzo Mihai G.,Komarov Pavel L.,Raad Peter E.,Kim M. J.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference17 articles.

1. Scaling constraints imposed by self-heating in submicron SOI MOSFET's

2. Applications of Aluminium Nitride Films Deposited by Reactive Sputtering to Silicon-On-Insulator Materials

3. AlN thin films grown by ion-beam-enhanced deposition and its application to SOI materials

4. Electrical properties of AlN thin films deposited at low temperature on Si(100)

5. The intrinsic thermal conductivity of AIN

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The transient thermoreflectance approach for high-resolution temperature mapping of GaN devices;Thermal Management of Gallium Nitride Electronics;2022

2. Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride;ECS Journal of Solid State Science and Technology;2017

3. Thermal conductivity of aluminium nitride thin films prepared by reactive magnetron sputtering;Journal of Physics D: Applied Physics;2011-12-09

4. Effect of Oxygen Impurities on Thermal Diffusivity of AlN Thin Films Deposited by Reactive RF Magnetron Sputtering;Japanese Journal of Applied Physics;2011-11-21

5. Effect of Oxygen Impurities on Thermal Diffusivity of AlN Thin Films Deposited by Reactive RF Magnetron Sputtering;Japanese Journal of Applied Physics;2011-11-01

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