Single Crystalline Germanium-Lead Alloy on Germanium Substrate Formed by Pulsed Laser Epitaxy-Reference-Cited by-同舟云学术

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Single Crystalline Germanium-Lead Alloy on Germanium Substrate Formed by Pulsed Laser Epitaxy

Published:2014-05-29 Issue:8 Volume:3 Page:P91-P93
ISSN:2162-8742
Container-title:ECS Solid State Letters
language:en
Short-container-title:ECS Solid State Letters

Author:

Zhou Q.,Chan T. K.,Lim S. L.,Zhan C.,Osipowicz T.,Gong X.,Tok E. S.,Yeo Y.-C.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular beam epitaxy growth and characterization of GePb alloys;Journal of Vacuum Science & Technology B;2024-05-01

2. P–i–n photodetector with active GePb layer grown by sputtering epitaxy;Applied Physics Express;2024-04-01

3. Growth and characterization of GePb/Ge multiple quantum wells;Journal of Alloys and Compounds;2023-02

4. Epitaxial growth and characterization of Ge1--Sn Pb ternary alloys;Journal of Alloys and Compounds;2020-07

5. Single-crystalline GePb alloys formed by rapid thermal annealing-induced epitaxy;Journal of Physics D: Applied Physics;2020-04-30

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