Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice like Structure

Author:

Hongxin Yang,Luping Shi,Koon Lee Hock,Rong Zhao,Minghua Li,Jianming Li,Guan Lim Kian,Chong Chong Tow

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference23 articles.

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3. Chen Y. C. Rettner C. T. Raoux S. Burr G. W. Chen S. H. Shelby R. M. Salinga M. Risk W. P. Happ T. D. McClelland G. M. Breitwisch M. Schrott A. Philipp J. B. Lee M. H. Cheek R. Nirschl T. Lamorey M. Chen C. F. Joseph E. Zaidi S. Yee B. Lung H. L. Bergmann R. Lam C. , Proc. Int. Electron Devices Meet., 1 (2006).

4. Program window of doped Sb2Te phase change line cells

5. Lateral SbTeN based multi-layer phase change memory for multi-state storage

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