Author:
Carron Veronique,Besson P.,Pierre François
Abstract
The paper deals with the nickel selective etching chemistries with respect to NiGe and high Ge content NiSiGe layers. Chemistries depicted in the literature are discussed. A focus is put on H2SO4 96% ("water free" approach), for which the etching mechanism is investigated.
Publisher
The Electrochemical Society
Cited by
6 articles.
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