Application of Supercritical CO[sub 2] Fluid for Dielectric Improvement of SiO[sub x] Film-Reference-Cited by-同舟云学术

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Application of Supercritical CO[sub 2] Fluid for Dielectric Improvement of SiO[sub x] Film

Published:2009 Issue:2 Volume:12 Page:H35
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Tsai Chih-Tsung,Chang Ting-Chang,Liu Po-Tsun,Cheng Yi-Li,Kin Kon-Tsu,Huang Fon-Shan

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference18 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Characterisation ofn-channel germanium MOSFET with gate insulator formed by high-pressure thermal oxidation

3. Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory

4. High-performance polymer tfts printed on a plastic substrate

5. Sub-100°C a‐Si:H thin-film transistors on plastic substrates with silicon nitride gate dielectrics

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface optimization of 4H-SiC (0001) MOS structures with supercritical CO2 fluid;Applied Physics Express;2020-10-14

2. Agglomeration and diffusion in Cu thin films under supercritical CO2annealing;Japanese Journal of Applied Physics;2015-04-15

3. RETRACTED: Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment;The Journal of Supercritical Fluids;2014-01

4. Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment;IEEE Electron Device Letters;2012-12

5. Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment;Applied Physics Letters;2012-09-10

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