Growth of GaN/InGaN Films and Heterostructures Via Super-Atmospheric MOCVD
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Published:2016-04-25
Issue:5
Volume:72
Page:41-45
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Krause John Robert,Stokes Edward Brittain
Abstract
In the interest of improving crystalline quality and optical performance of MOCVD grown semiconductors a unique super-atmospheric reactor was designed and fabricated. This reactor has since been used to fabricate GaN/InGaN multi-quantum-well heterostructures under superatmospheric growth conditions. The resulting samples were analyzed through in-situ and ex-situ measurements.
Publisher
The Electrochemical Society