Very High Deposition Rate of a-Si:H Thin Films by ECRCVD

Abstract

For the reduction of the manufacturing cost, a high deposition rate of amorphous silicon (a-Si:H) thin film in fabrication is very important. Thus high plasma density and low process temperature deposition technique is keen to develop. Another issue of a-Si:H thin film uses plasma enhanced CVD which causes plasma damage to the film. We use electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit a-Si:H layers with varying microwave power, magnetic field, and hydrogen dilution. The major advantages of ECRCVD are high deposition rate and remote plasma zone that can avoid surface damage. A high deposition rate more than 2 nm/sec was developed by ECRCVD. Fourier transform infrared spectroscopy (FTIR) is used for measuring the microstructure factor (R*) to interpret the effects of microwave power, magnetic field, and hydrogen dilution.