Author:
Wang Wanjing,Li Xifeng,Zhang Jinsong,Zhang Jianhua
Abstract
Indium-Tin-Oxide (ITO) film prepared by DC magnetron sputtering was used as a current spread layer for LEDs. After the annealing treatment, the physical prosperities of p-GaN based LED have been investigated. The N2 annealing improved the surface roughness of ITO film to reach the smallest value (8 nm RMS) and exhibited an ohmic contact for ITO/p-GaN interface with the forward voltage decreasing. In comparison with electron beam evaporation, the ITO film prepared by DC magnetron sputtering had better optical and electronic prosperities after the annealing treatment.
Publisher
The Electrochemical Society
Cited by
1 articles.
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