Effect of Ambient Oxygen Partial Pressure on the Hydrogen Response of SnO2 Semiconductor Gas Sensors

Author:

Suematsu KoichiORCID,Watanabe KenORCID,Yuasa MasayoshiORCID,Kida TetsuyaORCID,Shimanoe KengoORCID

Funder

Japan Society for the Promotion of Science KAKENHI

The Murata Science Fundation

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Taguchi N. , Metal Oxide Gas Sensor. Japan Pat. No. S45-38200 (1962).

2. Homepage of Figaro Engineering Inc. Available online: https://www.figaro.co.jp/en/(accessed on 31 January 2019).

3. Homepage of Nissha FIS Inc. Available online: http://www.fisinc.co.jp/en/(accessed on 31 January 2019).

4. Toward innovations of gas sensor technology

5. Synthesis of monodispersed SnO2 nanocrystals and their remarkably high sensitivity to volatile organic compounds

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