Mechanism of Surface Roughness in Hydrogen Plasma‐Cleaned (100) Silicon at Low Temperatures-Reference-Cited by-同舟云学术

Mechanism of Surface Roughness in Hydrogen Plasma‐Cleaned (100) Silicon at Low Temperatures

Published:1997-01-01 Issue:1 Volume:144 Page:335-339
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Hwang Ki‐Hyun¹²³²⁴,Yoon Euijoon¹²³²⁴,Whang Ki‐Woong¹²³²⁴,Lee Jeong Yong¹²³²⁴

Affiliation:

1. School of Materials Science and Engineering, Seoul National University, Seoul 151‐742, Korea

2. Inter‐University Semiconductor Research Center (ISRC), Seoul National University, Seoul 151‐742, Korea

3. School of Electrical Engineering, Seoul National University, Seoul 151‐742, Korea

4. Department of Materials Engineering, Korea Advanced Institute of Science and Technology (KAIST), Taejon 305‐701, Korea

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1837405/pdf

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