Optimization and Mechanism on Chemical Mechanical Planarization of Hafnium Oxide for RRAM Devices-Reference-Cited by-同舟云学术

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Optimization and Mechanism on Chemical Mechanical Planarization of Hafnium Oxide for RRAM Devices

Published:2014 Issue:7 Volume:3 Page:P249-P252
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Zhang Kailiang,Feng Yulin,Cao Ji,Wang Fang,Han Yemei,Yuan Yujie,Philip Wong H. S.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Chemical mechanical planarization for microelectronics applications

2. Burkhard Craig D. Li Yuzhuo , Microelectronic applications of chemical mechanical planarization, p. 369, John Wiley & Sons, New York (2007).

3. Chemical Mechanical Polishing of InP

4. Chemical mechanical planarization of germanium shallow trench isolation structures using silica-based dispersions

5. Boron-Based Nanoparticles for Chemical-Mechanical Polishing of Copper Films

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1. The effect of ethylenediamine tetramethylphosphonic acid on the chemical mechanical polishing of TSV barrier layer;Colloids and Surfaces A: Physicochemical and Engineering Aspects;2024-04

2. Effect of Ultra Soft CMP Processing Parameters on Topography of HgCdTe Wafer Surfaces;ECS Journal of Solid State Science and Technology;2019

3. Effect of polishing parameters on abrasive free chemical mechanical planarization of semi-polar (112¯2) aluminum nitride surface;Journal of Semiconductors;2016-03

4. Influence of Polishing Parameters on Abrasive Free Chemical Mechanical Planarization (AFCMP) of Non-Polar (11-20) and Semi-Polar (11-22) GaN Surfaces;ECS Journal of Solid State Science and Technology;2015

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