Dynamic Negative Bias Stress Instability Effects in Hafnium Silicon Oxynitride and Silicon Dioxide

Abstract

Negative bias temperature instability (NBTI) is an issue of critical importance as the space electronics industry evolves because it may dominate the reliability lifetime of space based assets. Understanding its physical origin is therefore essential in determining how best to search for methods of mitigation. It has been suggested ¬that the magnitude of the effect is strongly dependent on circuit operation conditions (static or dynamic modes). In the present work, we examine the time constants related to the charging and recovery of trapped charged induced by NBTI in HfSiON and SiO2 gate dielectric devices at room temperature.