Author:
Hasunuma Ryu,Tamura Chihiro,Nomura Tsuyoshi,Kikuchi Yuuki,Ohmori Kenji,Sato Motoyuki,Uedono Akira,Chikyow Toyohiro,Shiraishi Kenji,Yamada Keisaku,Yamabe Kikuo
Abstract
The dielectric degradation under electrical stress application was attributed to generation of oxygen vacancy Vo, and structural transformation" in HfSiON films, in addition to widely known charge trapping. The former two result from ion drift under electrical field due to its ionic character of Hf-based dielectrics. While Vo generation and charge trapping are atomic-range phenomena, it is surprising that long-range structural transformation can also occur under electrical filed before dielectric breakdown even at room temperature. The transformation is derived by intensive mass transport in the dielectric film, thereby can not be annealed out.
Publisher
The Electrochemical Society
Cited by
2 articles.
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