A Multi-Objective Layout Decomposition Framework for Self-Aligned Double Patterning Lithography

Abstract

Due to the limitation of current lithography technology, double patterning lithography (DPL) has become the leading candidate for lithography process in sub-30nm integrated circuit (IC) manufacturing. Among all DPL technologies, self-aligned double patterning (SADP) lithography presents greatest potential to real implementation in recent studies. An optimal decomposition strategy is always necessary to implement SADP in 2D design. An efficient SADP decomposition algorithm based on satisfactory (SAT) problem for 2D design has been proposed in recent studies. In this paper, we present a multi-objective layout decomposition framework for SADP based on graph partitioning algorithm and previously proposed SAT problem. Experimental results show that with less runtime our framework can get more balanced density of core mask, more simplified core mask and trim mask and less overlay impact compared to previous work.