Reactive Ion Etching of Silicon and Silicides in SF 6 or NF 3 / CCl4 or HCl Mixtures-Reference-Cited by-同舟云学术

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Reactive Ion Etching of Silicon and Silicides in SF 6 or NF 3 / CCl4 or HCl Mixtures

Published:1985-08-01 Issue:8 Volume:132 Page:1969-1973
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Chow T. P.¹,Fanelli G. M.¹

Affiliation:

1. General Electric Company, Corporate Research and Development, Schenectady, New York 12301

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2114263/pdf

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermophysical properties of CF4/O2and SF6/O2gas mixtures;Journal of Physics: Conference Series;2016-03

2. Electron transport parameters in NF3;Journal of Physics D: Applied Physics;2014-02-26

3. Highly textured multi-crystalline silicon surface obtained by dry etching multi-step process;Solar Energy Materials and Solar Cells;2013-09

4. Surface-science aspects of plasma-assisted etching;Applied Physics A Solids and Surfaces;1994-11

5. Reactive Ion Etching of Silicon Trenches Using SF 6 / O 2 Gas Mixtures;Journal of The Electrochemical Society;1991-10-01

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