Process Characterization and Control of Polycrystalline SiGe as the Gate Electrode in CMOS Fabrication-Reference-Cited by-同舟云学术

Process Characterization and Control of Polycrystalline SiGe as the Gate Electrode in CMOS Fabrication

Published:2005 Issue:2 Volume:152 Page:G126
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Lin Hong,Lo Wai,Gu Shiqun,Hornback Verne,Elmer Jim,Catabay Wilbur

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference25 articles.

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