Author:
Shih Kun-Huan,Chui Chi On
Abstract
Two novel Permeable Base Transistor (PBT) structures for base leakage suppression with lattice-matched In0.53Ga0.47As channel have been proposed. The operations of these novel devices have been analyzed, and their DC and RF performance have been evaluated against the conventional PBT.
Publisher
The Electrochemical Society
Cited by
1 articles.
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