Thin Films of HfO[sub 2] for High-k Gate Oxide Applications from Engineered Alkoxide- and Amide-Based MOCVD Precursors-Reference-Cited by-同舟云学术

Thin Films of HfO[sub 2] for High-k Gate Oxide Applications from Engineered Alkoxide- and Amide-Based MOCVD Precursors

Published:2007 Issue:3 Volume:154 Page:G77
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Thomas Reji,Rije Eduard,Ehrhart Peter,Milanov Andrian,Bhakta Raghunandan,Bauneman Arne,Devi Anjana,Fischer Roland,Waser Rainer

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference30 articles.

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5. Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology

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