Synchrotron‐Radiation‐Excited Etching of Silicon Wafer Enhanced by Disk‐Shaped CF 4 Plasma-Reference-Cited by-同舟云学术

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Synchrotron‐Radiation‐Excited Etching of Silicon Wafer Enhanced by Disk‐Shaped CF 4 Plasma

Published:1996-12-01 Issue:12 Volume:143 Page:4109-4112
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Shao Chunlin¹,Soga Tetsuo²,Umeno Masayoshi¹,Hattori Shuzo³

Affiliation:

1. Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso‐cho, Showa‐ku, Nagoya 466, Japan

2. Instrument and Analysis Center, Nagoya Institute of Technology, Gokiso‐cho, Showa‐ku, Nagoya 466, Japan

3. Nagoya Industrial Science Research Institute, Yotsuya‐dori, Chikusa‐ku, Nagoya 464, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1837345/pdf

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