Vertically Configured Nanodiamond Vacuum Field Emission Transistor Arrays

Abstract

The design, fabrication and device characteristics of a vertically configured nanodiamond vacuum field emission transistor array are reported. The device is fabricated by a simple dual-mask process, involving mold transfer technique, growth of chemical vapor deposited nanodiamond and formation of self-aligning gate structure from a silicon-on-insulator (SOI) substrate. The gate controlled emission current modulation was achieved at a relatively low gate turn-on voltage of 25 V. The device demonstrates transistor characteristics with high emission anode current of 160 uA and negligible gate intercepted current of less than 3 uA at gate voltage of 34 V. This nanodiamond VFET promises potential applications in vacuum microelectronics, including vacuum integrated circuits.