Impact of Atomistic Surface Structure on Macroscopic Surface Reaction Rate in MOVPE of GaAs-Reference-Cited by-同舟云学术

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Impact of Atomistic Surface Structure on Macroscopic Surface Reaction Rate in MOVPE of GaAs

Published:2007 Issue:4 Volume:10 Page:H123
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Sugiyama Masakazu,Song Haizheng,Deura Momoko,Nakano Yoshiaki,Shimogaki Yukihiro

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference17 articles.

1. Surface science at atmospheric pressure: Reconstructions on (001) GaAs in organometallic chemical vapor deposition

2. Metalorganic vapour phase epitaxial growth on vicinal GaAs (001) surfaces studied by reflectance anisotropy spectroscopy

3. GaAs surface control during metalorganic vapor phase epitaxy by reflectance anisotropy spectroscopy

4. Monolayer growth oscillations and surface structure of GaAs(001) during metalorganic vapor phase epitaxy growth

5. Effect of Surface Misorientation on the Kinetics of GaAs MOVPE Examined Using Selective Area Growth

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