Ge Surface-Energy-Driven Secondary Grain Growth for Vertical Channel in 3D NAND Flash Memories
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Published:2013-03-15
Issue:9
Volume:50
Page:991-995
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Lee Sangsoo,Son Yong-Hoon,Yoon Euijoon
Abstract
The Ge surface-energy-driven secondary grain growth (SEDSGG) technique is demonstrated here for vertical channel in 3D NAND flash memories. The as-deposited polycrystalline Ge films via rapid thermal annealing show a dominant (111) texture, grain enlargement up to approximately 1 um, and a microstructure with a very low intra-grain defect density. With an increase in the annealing temperature and time, the distribution of the (111) nominal orientations also increases, thus accounting for the SEDSGG of the Ge films. These Ge SEDSGG films show relatively high carrier mobility (163 cm2/Vs) according to the Hall effect measurements.
Publisher
The Electrochemical Society