(Invited) Finely Controlled Heterointerfaces between Ge(111) and Metallic Alloys or Insulators for Next Generation Ge-Based Devices
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Published:2016-08-18
Issue:8
Volume:75
Page:651-659
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Hamaya Kohei,Yamada Shinya,Kasahara Kenji,Kanashima Takeshi
Abstract
Heteroepitaxial growth of bcc metallic alloys or a high-k insulator on Ge(111) has been explored for next generation Ge-based devices. First, we introduce a finely controlled crystal growth technique of bcc-type ferromagnetic alloys on Ge(111). Next, we show that the Fermi level pinning is significantly suppressed at the high-quality bcc-alloys/Ge heterointerfaces. Using these kinds of structures, we can achieve spin injection and detection in n-Ge. Finally, we present a new approach to gate-stack structures for Ge-MOSFET. Even a crystalline high-k insulator can be grown epitaxially on Ge(111) and a high-quality heterointerface can be achieved. Also, reasonable electrical characteristics are obtained. These finely controlled heterointerfaces will open a way for developing new technologies in next generation Ge-based devices with low power consumption.
Publisher
The Electrochemical Society