Effects of Ge Content on the Oxidation Behavior of Poly-Si[sub 1−x]Ge[sub x] Layers for Gate Electrode Application-Reference-Cited by-同舟云学术

Effects of Ge Content on the Oxidation Behavior of Poly-Si[sub 1−x]Ge[sub x] Layers for Gate Electrode Application

Published:2001 Issue:2 Volume:148 Page:G50
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Ahn Tae-Hang,Yeo In-Seok,Kim Tae-Kyun,Joo Moon-Sig,Kim Hyeon-Soo,Kim Joong-Jung,Joung Joong-Ho,Park Jin Won

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference25 articles.

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2. S. J. Hillenius,Tech. Dig. Int. Electron Devices Meet., p. 252 (1986).

3. Characterization of polysilicon-gate depletion in MOS structures

4. Submicron transferred-substrate heterojunction bipolar transistors

5. Observation of Reduced Poly-Gate Depletion Effect for Poly-Si[sub 0.8]Ge[sub 0.2]-Gated NMOS Devices

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