Visualization of Plasma Etching Damage of Si Using Room Temperature Photoluminescence and Raman Spectroscopy

Author:

Jang Jian Shiu-Ko,Jeng Chih-Cherng,Wang Ting-Chun,Huang Chih-Mu,Wang Ying-Lang,Sik Yoo Woo

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference35 articles.

1. Wolf S. Tauber R. N. , Silicon Processing for the VLSI Era Volume 1 – Process Technology, Chapters 6, 9, 10 and 16, Lattice Press, Sunset Beach, California (1986).

2. Chang C. Y. Sze S. M. , ULSI Technology, Chapters 5 and 7, McGraw Hill, New York (1996).

3. Lieberman M. A. Lichtenberg A. J. , Principles of Plasma Discharges and Materials Processing, Chapters 15 and 16, John Wiley & Sons, New York (1994).

4. Renau A. Scheuer J. T. , in Ion Implantation Technology, Brown B. Alford T. L. Nastasi M. Vella M. C. , Editors, The Institute of Electrical and Electronics Engineers, p. 151 (2003).

5. Tsukamoto K. Kuroi T. Kawasaki Y. , in Ion Implantation Technology 2010, Matsuo J. Kase M. Aoki T. Seki T. , Editors, p. 9, AIP Conference Proceedings, 1321 (2010).

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