Characterization and Control of Silicon Surface Modification Produced by CCl4 Reactive Ion Etching-Reference-Cited by-同舟云学术

Characterization and Control of Silicon Surface Modification Produced by CCl4 Reactive Ion Etching

Published:1986-02-01 Issue:2 Volume:133 Page:408-416
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Rohatgi A.¹²³,Rai‐Choudhury P.¹²³,Fonash S. J.¹²³,Lester P.¹²³,Singh Ranbir¹²³,Caplan P. J.¹²³,Poindexter E. H.¹²³

Affiliation:

1. Westinghouse Research and Development Center, Pittsburgh, Pennsylvania 15235

2. Engineering Science Program, The Pennsylvania State University, University Park, Pennsylvania 16802

3. United States Army Electronics Technology and Devices Laboratory (ERADCOM), Fort Monmouth, New Jersey 07703

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2108588/pdf

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