Room Temperature Bonding with Lift-Off Resist Using the Surface Activated Bonding Method for a Layer Transfer Platform

Abstract

A room temperature bonding of polymethylglutarimide (PMGI) is performed as a temporary bonding process. The previous study showed that temporary bonding process with PMGI achieves extremely small residues on a debonded surface, but bonding temperature reaches to 250 oC. In this study, the surface activated bonding (SAB) method is applied for bonding the PMGI to the Si wafer at room temperature for heat-sensitive materials. Using SAB, a bonded area covering over 92% of the wafer surface, with a room temperature bond strength of ~2 J/m2, is achieved. For debonding, PMGI dissolve into N-methylpyrrolidone based solvent. Surface profile revealed that extremely small amount PMGI residues remains on the debonded surface. This process can be applied for 3D integration of 2D materials.