Molecular Beam Epitaxial Growth of 6.1 Semiconductors Heterostructures for Advanced p-type Quantum Well Devices

Abstract

The integration of high carrier mobility materials into future CMOS generations is presently being studied in order to increase drive current capability and to decrease power consumption in future generation CMOS devices. If III-V materials are the candidates of choice for n-type channel devices, antimonide-based semiconductors present high hole mobility and could be used for p-type channel for quantum well devices. In this work we first investigated building blocks such as passivation and contact resistances on both GaSb and InAs epilayer in order to define the optimal heterostructure for the quantum well device. In a second part, we focused on the growth studies of the complex heterostructure made with "6.1" semiconductors as well as the importance of the interface engineering with TEM. Finally, the properties of the optimized quantum well stack have been studied by means of photoluminescence and high resolution X-ray diffraction.