Investigating the Power Conversion Efficiency at 16.5% of CIGS Solar Cell Through Device Simulations

Abstract

Copper indium gallium selenide (CIGS) is the most promising material owing to its low cost, superior optical properties, high performance, low-temperature coefficient, direct bandgap, long-term stability, and high absorption coefficient. Thus, here in this work, a single-junction solar cell by employing CIGS (Eg=1.1 eV) material has been investigated. Further, the CdS buffer layer is also used, which contributes to the p-n junction formation. The cell is optimized for maximum conversion efficiency (16.5%) by collectively varying the thickness of CIGS and bulk defect density using the SCAPS-1D tool.