Effects of Electrode on the Performance of Al2O3Based Metal-Insulator-Metal Antifuse-Reference-Cited by-同舟云学术

Effects of Electrode on the Performance of Al2O3Based Metal-Insulator-Metal Antifuse

Published:2019 Issue:2 Volume:8 Page:N32-N35
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Tian Min^ORCID,Zhong Huicai^ORCID

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Hamdy E. Mccollum J. Chen S. O. Chiang S. , “Dielectric based antifuse for logic and memory ICs,” in Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International, 1988, pp. 786.

2. Villaret Ebrard Guillaumet Candelier Coronel Schoellkopf , “W/Ta 2 O 5 /TaN MIM capacitor for high density one time programmable memory,” pp. 230, 2007.

3. One-Time Programmable Memory Based on ${\rm ZrTiO}_{x}$ Antifuse for Crossbar Memory Application Featuring High Speed Operation and Low Power Consumption

4. Stackable All-Oxide-Based Nonvolatile Memory With $ \hbox{Al}_{2}\hbox{O}_{3}$ Antifuse and $\hbox{p-CuO}_{x}/ \hbox{n-InZnO}_{x}$ Diode

5. A new high-κ Al 2 O 3 based metal-insulator-metal antifuse

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