A Study on Improving the Reliability of Polysilicon TFTs Employing Dual-Layered Gate Insulator-Reference-Cited by-同舟云学术

A Study on Improving the Reliability of Polysilicon TFTs Employing Dual-Layered Gate Insulator

Published:2008 Issue:4 Volume:155 Page:H224
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Kim Chang-Yeon,Park Sang-Geun,Han Min-Koo,Lee Hong-Koo,Lee Seok-Woo,Jung Sang-Hoon,Kim Chang-Dong,Kang In Byeong

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference13 articles.

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2. H. S. Seo, D. H. Nam, N. B. Choi, S. H. Paek, T. J. Ahn, J. S. Yoo, J. M. Yoon, S. W. Lee, C. D. Kim, and I. J. Chung ,Proceedings of the 12th International Display Workshops in Conjunction with ASIA Display, Society for Information Display, p. 1129 (2005).

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