Oxygen Precipitation in Lightly and Heavily Doped Czochralski Silicon

Abstract

Oxygen precipitation in Czochralski (CZ) silicon has been studied for nearly half a century due to its important impact on material and device properties. This paper summarizes the recent understandings of oxygen precipitation in lightly and heavily doped CZ-Si mainly reported by the research groups including the present author. Systematic experiments of annealing condition and dopant effect, and detail analyses of TEM observations and other methods contributed to understand the precipitation mechanism. Further, the theoretical analyses were carried out to explain some experimental results.